Mount  

Surface Mount

Mounting Type  

Surface Mount

Package / Case  

8-SOIC (0.154, 3.90mm Width)

Number of Pins  

8

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

3.5A 2.3A

Number of Elements  

2

Turn Off Delay Time  

20 ns

Operating Temperature  

-55°C~150°C TJ

Packaging  

Tube

Series  

HEXFET®

Published  

2004

Part Status  

Discontinued

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

8

ECCN Code  

EAR99

Resistance  

100mOhm

Additional Feature  

AVALANCHE RATED, HIGH RELIABILITY

Max Power Dissipation  

2W

Terminal Position  

DUAL

Terminal Form  

GULL WING

Current Rating  

3.5A

Base Part Number  

IRF9952PBF

Row Spacing  

6.3 mm

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

2W

FET Type  

N and P-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

100m Ω @ 2.2A, 10V

Vgs(th) (Max) @ Id  

1V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds  

190pF @ 15V

Gate Charge (Qg) (Max) @ Vgs  

14nC @ 10V

Rise Time  

14ns

Polarity/Channel Type  

N-CHANNEL AND P-CHANNEL

Fall Time (Typ)  

6.9 ns

Continuous Drain Current (ID)  

3.5A

Threshold Voltage  

1V

Gate to Source Voltage (Vgs)  

20V

Drain to Source Breakdown Voltage  

30V

Pulsed Drain Current-Max (IDM)  

16A

Avalanche Energy Rating (Eas)  

44 mJ

FET Technology  

METAL-OXIDE SEMICONDUCTOR

FET Feature  

Logic Level Gate

Nominal Vgs  

1 V

Height  

1.4986mm

Length  

4.9784mm

Width  

4.05mm

REACH SVHC  

No SVHC

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free